triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com advance product information january 7, 2004 1 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice 1.0 1.5 2.0 2.5 3.0 26 28 30 32 34 36 38 40 frequency (ghz) noise figure (db) -30 -20 -10 0 10 20 30 20 22 24 26 28 30 32 34 36 38 40 frequency (ghz) gain & return loss (db) ka band low noise amplifier TGA4507-EPU key features ? typical frequency range: 28 - 36 ghz ? 2.3 db nominal noise figure ? 22 db nominal gain ? 12 dbm nominal p1db ? bias 3.0 v, 60 ma ? 0.15 um 3mi phemt technology ? chip dimensions 1.86 x 0.85 x 0.1 mm (0.073 x 0.033 x 0.004 in) primary applications ? point-to-point radio ? point-to-multipoint radio ? ka band vsat preliminary measured data bias conditions: vd = 3.0 v, id = 60 ma orl gain irl
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com advance product information january 7, 2004 2 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice table i maximum ratings 1/ symbol parameter value notes vd drain voltage 5 v 2/ vg gate voltage range -1 to +0.5 v id drain current 280 ma 2/ 3 / ig gate current 6 ma 3/ p in input continuous wave power tbd p d power dissipation tbd 2/ 4 / t ch operating channel temperature 150 0 c5/ 6 / t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1/ these ratings represent the maximum operable values for this device. 2/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3/ total current for the entire mmic. 4/ when operated at this bias condition with a base plate temperature of tbd, the median life is reduced from tbd to tbd hrs. 5/ junction operating temperature will directly affect the device median time to failure (mttf). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6/ these ratings apply to each individual fet. TGA4507-EPU
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com advance product information january 7, 2004 3 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice table iii electrical characteristics (ta = 25 0 c nominal) TGA4507-EPU parameter typical units drain voltage, vd 3.0 v drain current, id 60 ma gate voltage, vg -0.5 to 0 v small signal gain, s21 22 db input return loss, s11 8 db output return loss, s22 8 db noise figure, nf 2.3 db output power @ 1 db compression gain, p1db 12 dbm q1 is 100 um fet, q2 is 200 um fet, q3 is 300 um fet. table ii dc probe tests (ta = 25 0 c, nominal) symbol parameter min. typ. max. units v bvgd3 breakdown voltage gate-source -5 v v p1,2,3 pinch-off voltage -0.4 v
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com advance product information january 7, 2004 4 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice TGA4507-EPU preliminary measured data bias conditions: vd = 3.0 v, id = 60 ma 10 12 14 16 18 20 22 24 26 28 30 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 frequency (ghz) gain (db) 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 frequency (ghz) noise figure (db)
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com advance product information january 7, 2004 5 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice TGA4507-EPU preliminary measured data bias conditions: vd = 3.0 v, id = 60 ma -30 -25 -20 -15 -10 -5 0 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 frequency (ghz) input return loss (db) -30 -25 -20 -15 -10 -5 0 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 frequency (ghz) output return loss (db)
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com advance product information january 7, 2004 6 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice 0 3 6 9 12 15 18 21 24 -16 -14 -12 -10 -8 -6 -4 -2 pin (dbm) pout (dbm), gain (db) 60 65 70 75 80 85 90 95 100 id (ma) TGA4507-EPU preliminary measured data bias conditions: vd = 3.0 v, id = 60 ma, freq @ 30 ghz pout gain ids -60 -50 -40 -30 -20 -10 0 10 20 30 -28 -26 -24 -22 -20 -18 -16 -14 -12 pin/tone (dbm ) pout/tone (dbm) pfundamental oip3 imd3
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com advance product information january 7, 2004 7 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice mechanical drawing TGA4507-EPU gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test.
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com advance product information january 7, 2004 8 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice chip assembly diagram TGA4507-EPU gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. rf bond wires should be as short as possible
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com advance product information january 7, 2004 9 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGA4507-EPU reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 c (30 seconds max). an alloy station or conveyor furnace wi th reducing atmosphere should be used. no fluxes should be utilized. coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. maximum stage temperature is 200 c.
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